ECE 60600, Solid State Devices I (Lecture) Syllabus, Fall 2023
Course Information
● Course dates: Aug 21, 2023 - Dec 09, 2023
● Instructional modality: Asynchronous lectures online and in-person recitations.
○ All course materials, including recorded lectures, are available in the Brightspace course.
○ A detailed schedule of lectures and deadlines of quizzes, homework, and projects is provided at the end of this syllabus.
○ One optional but strongly encouraged recitation per week.
● Course credit hours: 3
Instructor(s) Information
● Dr. Haitong Li, Assistant Professor, School of Electrical and Computer Engineering. ○ Office: BRK 2038; Email: [email protected]; Phone: 6-0740
● Acknowledgement: course materials developed by Dr. Gerhard Klimeck (Deputy CIO, Associate Vice President of Academic IT, Elmore Professor of ECE).
● Teaching Assistant: Hong-Yang Lin, Email: [email protected]
● Office hours: See the Brightspace course for details.
Course Description
This course provides the graduate-level introduction to understand, analyze, characterize, and design the operation of semiconductor devices such as transistors, diodes, solar cells, light-emitting devices, and more.
Audience: The material will primarily appeal to electrical engineering students whose interests are in applications of semiconductor devices in circuits and systems. The treatment is physics-based, provides derivations of the mathematical descriptions, and enables students to quantitatively analyze device internal processes, analyze device performance, and begin the design of devices given specific performance criteria.
Technology users will gain an understanding of the semiconductor physics that is the basis for devices. Semiconductor technology developers may find it a useful starting point for diving deeper into condensed matter physics, statistical mechanics, thermodynamics, and materials science. The course presents an electrical engineering perspective on semiconductors, but those in other fields may find it a useful introduction to the approach that has guided the development of semiconductor technology for the past 50+ years.
Learning Resources, Technology & Texts
Required Textbook
There are significant weekly reading assignments from these two textbooks throughout the course.
• ASF = Advanced Semiconductor Fundamentals, second edition, Robert F. Pierret, Publisher:Pearson, ISBN-13: 978-0130617927
• SDF = Semiconductor Device Fundamentals, Robert. F. Pierret, Publisher Addison Wesley, ISBN-13: 978-0201543933
Additional Web Resources
We will use simulation tools on nanoHUB.org throughout this course.
Usage of the simulation resources on nanoHUB.org requires users to register for a free account. Navigate to nanoHUB Sign Up to register for a free account.
We will be using at least the following tools:
- ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
- Abacus contains several tools that can also be accessed directly via:
o CrystalViewerLab(NewInteractiveFrontEnd)
o Piece-WiseConstantPotentialBarriersTool
o PeriodicPotentialLab-KronigPenneyModel-NewInteractiveVersion o PNJunctionLab
o BJTLab o MOScap o MOSFET
- Band Structure Lab
- Bound States Calculation Lab
- Quantum Dot Lab – needed for project 1.
- Multi-Gate-FET (mugfet) also called nanofinfet – needed for project 2
- Omenwire – needed for project 2
- Nanowire – needed for project 2 (pending some code fixes on nanoHUB).
Learning Outcomes
After completing this course, you will be able to:
• Explain the working principles of these devices.
• Explain the physical processes in these devices.
• Relate the device performance to materials and design criteria.
• Speak the “language” of device engineers.
• Be ready to engage in device research.
More specifically students will be able to
• Select material systems for specific device performance and device designs.
• Understand the origin of bandstructure and devise methods to design bandstructure through
material composition, strain, and quantization effects.
• Draw band diagrams for any typical electronic device and infer device operations and device
capabilities from such diagrams.
• Fundamentally understand and have a mental picture for holes, electrons, density of states,
doping, minority carriers, occupation, Fermi Level, Quasi-Fermi Level, and associate specific
device performance given a specific band diagram or device configuration.
• Utilize the set of semiconductor equations to compute electron and hole densities and to design
classical devices such as diodes, transistors, etc.
• Understand the concepts associated with thermally activated carrier distributions in doped
homojunctions and heterojunctions and to devise methods to optimize device performance.
• Fundamentally understand PN-Junctions, BJTs, HBTs, MOScaps, and MOSFETs in their
performance limits and be able to expand on existing design concepts to improve performance.
• Understand typical quantum effects in modern devices such as tunneling and state quantization
and devise methods to alleviate negative impact or utilize these quantum effects for new devices.
Assignments
Assessment Type
Description
% of Final
Grade
Homework
There are 9 homework assignments. Homework due dates:
• Homework must be uploaded to Gradescope before the specified due date.
• Late homework will, in general, not be accepted. In special circumstances, individuals can request an extension (see discussion below).
Homework solutions:
• Students will be given online access to homework solutions that are watermarked to their identity.
• Solutions can be viewed but not downloaded or printed.
• Homework solutions are NOT to be disseminated to anyone else. Important! Your homework grade will be determined as follows:
• For each HW, only one selected problem will be graded to determine the overall grade of that particular HW.
• The total number of points for all homework is about 19% of the final grade.
Feedback: Homework feedback can be viewed in Gradescope.
19%
Section quizzes
Each lecture section (2 through 32) is associated with a short quiz of 8 questions.
• The quizzes are either multiple-choice or integer numbers and are evaluated automatically.
• The quizzes are available throughout the course to enable students to work at their own pace.
• The assumption is that 2-5 minutes are needed at most to answer each quiz question
• Some quizzes may require a fast Google search to identify alternative technical terms used in the specific lectures.
Attempts:
• You may attempt the answers twice.
Quiz due dates:
• The quizzes typically close the Monday after the associated lecture week for evaluation and possible discussion with students.
Important! Your quiz grade will be determined as follows:
• There are 31 section quizzes in this course.
• The total number of points for all quizzes is about 13% of the final
grade.
13%
Assessment Type
Description
% of Final
Grade
Projects
There will be 2 projects. Each project is 25% of the course grade.
Each project is a team effort of 3 members. Individual submissions or teams of 2 will not be accepted.
• Project 1: Quantum Dot Design o Sections 2 – 12
• Project 2: Nanowire Design – Independent Study Time o Sections 30 – 32
▪ InitialReportwillbeturnedinbydateandtime designated in the course schedule.
▪ FinalReportwillbedueendofweek15.
• Projects will be peer-reviewed as an essential part of evaluation.
• Final project grades will be determined by Prof. Li with statistics and inputs from the peer reviews.
See the project documents in the Brightspace course for full project details.
50%
Project Peer Review
Students are assigned 6 separate project reviews (3% of final grade max):
• Each student will review 3 peer submissions for each of the 2 projects (3+3 reviews)
• The peer reviews will be guided by provided evaluation rubrics.
• Each review will likely take 30 to 45 minutes.
• Statistical variations will show how well each person performed in their reviews.
• Instead of a formal final, students will evaluate project 2 submissions during finals week.
• The instructor will evaluate the quality of the peer reviews and assign respective grades.
• Bonus Opportunity (6%): Students are invited to provide up to 2 additional peer reviews.
Further details are provided in the BrightSpace course.
18%
Schedule
The course schedule is provided at the end of this document.
Grading Scale
The grading scale will be adjusted on a curve at the end of the course.
It will be based on overall class performance. However, the grade cut-offs will never be higher than thegrade cut-offs listed here:
A-: 90-92, B-: 80-82, C-: 70-72, D-: 60-62, F: <=59
Course Help
Piazza: To get help with course content, use the Piazza discussion forums. By commenting in the unit discussion forums, the course team will be able to respond to your question more quickly. See the Brightspace course for the link. Students are encouraged to fully utilize the in-class or online recitations as well as the TA office hours.
Email: If a resolution of issues cannot be attained via Piazza, you can also send an email to the instructor to arrange personal help. The instructor will be available via email daily and try to respond as soon as possible (generally within 24-48 hours in the work week).
When emailing please place the course name [ECE606] as the topic in the subject line of the email (e.g., [ECE606] – Assignment 2 Question). This will help the instructor tremendously in locating and responding to your emails quickly.
Discussion Guidelines
Please follow these guidelines when contributing to the Piazza forum in this course.
• Do not use offensive language. Present ideas appropriately.
• Be cautious in using the Internet language. For example, do not capitalize all letters since
this suggests shouting.
• Avoid using vernacular or slang language. This could possibly lead to misinterpretation.
• Do not hesitate to ask for feedback.
• Be concise and to the point.
• Think and edit before you push the “Send” button.
Missed or Late Work
In general, no late submissions are accepted, unless there are extreme circumstances. If you feel you have encountered an extreme circumstance, contact the instructor with an explanation and plan for completion. These requests will be accepted at the instructor’s discretion and may include a point penalty of 10% per day late. Asking for an extension does not guarantee it will be granted.
A: 93-96,
B: 83-86,
C: 73-76,
D: 64-66, D+: 67-69
A+: >= 97 B+: 87-89 C+: 77-79
How to Succeed in this Course
If you want to be a successful student:
• Be self-motivated and self-disciplined.
• Be willing to “speak up” if problems arise.
• Be willing and able to commit to 9 to 15 hours per week in this course.
• Be able to communicate through writing.
• Be able to meet the minimum requirements for the course.
• Accept critical thinking and decision making as part of the learning process.
More specifically - to be a successful student:
• Do the homework assignment and quizzes
o Takeyourtimeperformingthework.
o Thinkaboutthepurposeofthequestions
o Copyingresultsfromtheweboryourpeersisnotonlyunethicalandinviolationof
academic integrity, but it prevents you from learning the required material. As a
result,you will fail in the exams.
o Copyingresultsfromtheweboryourpeersisnotonlyunethicalandinviolationof
academic integrity, but it prevents you from learning the required material. As a
result,you will fail in the exams.
• Two independent projects carry 50% of the course score. These projects must be completed
in teams of 3persons (one or two teams may end up with 4 members based upon actual enrollment). The completion requires significant time. You should start EARLY on these projects. You depend on a simulation facility that may fill up with simulation runs. 40% of each project score is the video presentation of your results. Preparing results and presenting them requires significant time!
In contrast, here are some common behaviors that lead to failing the course.
• Copy and paste results from some “file” into the homework. It is not only plagiarism but
will very likely make you an inefficient project partner and project reviewer.
• Don’t read until the night before the discussion.
• Don’t engage in the recitations.
• Wait until the last day to begin assignments.
• Wait until a week before the project is due. You need more than a week!
• Forget about deadlines.
• Ignore emails from the instructor and/or your peers regarding course activities.
Disclaimer
This syllabus is subject to change.
Academic Integrity
Academic integrity is one of the highest values that Purdue University holds. Individuals are encouraged to alert university officials to potential breaches of this value by either emailing [email protected] or by calling 765-494-8778. While information may be submitted anonymously, the more information is submitted the greater the opportunity for the university to investigate the concern. More details are available on our course Brightspace table of contents, under University Policies.
ATTENTION: Plagiarism Note
In general, quiz and homework solutions can be solved by understanding lecture material provided in this course. You are welcome to use other resources to supplement your understanding and knowledge.
If you are using any material, regardless of its origin, it is critical that you give proper reference and citation.
You must distinguish between someone else's text or figures from your own words & pictures.
The purpose of homework is to foster a learning process. You can quote outside material but will only then get credit for formulating the answer in your own words which reflects your understanding.
You cannot get credit for copy & paste.
There are online and in-person sections of this class. ANY evidence of sharing any aspect of the questions and answers in quizzes, homework, and exam outside the recitations will result in ZERO SCORES.
Plagiarism is NOT acceptable and will be reported to the Dean of Students. Plagiarism will result in zero credit for the whole assignment.
In contrast, extensive collaborations are strongly encouraged within project teams and team members will receive the same score for their project.
Nondiscrimination Statement
Purdue University is committed to maintaining a community which recognizes and values the inherent worth and dignity of every person; fosters tolerance, sensitivity, understanding, and mutual respect among its members; and encourages each individual to strive to reach his or her potential. In pursuit of its goal of academic excellence, the University seeks to develop and nurture diversity. The University believes that diversity among its many members strengthens the institution, stimulates creativity, promotes the exchange of ideas, and enriches campus life.
Nondiscrimination Policy Statement
Accessibility
Purdue University strives to make learning experiences as accessible as possible. If you anticipate or experience physical or academic barriers based on disability, you are welcome to let me know so thatwe can discuss options. You are also encouraged to contact the Disability Resource Center
at: [email protected] or by phone: 765-494-1247.
Diversity & Inclusion
In our discussions, structured and unstructured, we will principally engage in challenging technical issues. The specific lens in which the issues are viewed and perceived as well as the engagement in discussions, depend on each individual’s past personal experiences. Everyone should remember thefollowing points:
● We are all in the process of learning about others and their experiences. Please speak with me,anonymously if needed, if something has made you uncomfortable.
● Intention and impact are not always aligned, and we should respect the impact something mayhave on someone even if it was not the speaker’s intention.
● We all come to the class with a variety of experiences and a range of expertise, we shouldrespect these in others while critically examining them in ourselves.”
We strive for equity, providing equal access and opportunity, and working to maximize student potential. This requires both instructor and students to identify and remove barriers that may prevent someone from full access or full participation. You can help by:
● Contacting me, anonymously if needed, if you see a potential barrier for someone or yourself inparticipating fully in the class. This might be a physical barrier such as access to technology or a personal situation.
● Suggesting ways in which members of our class can support each other. Virtual study groupsand discussion boards are examples, but I encourage you to be creative in your ideas.
● Getting to know each other as contributing members of our learning community. Everyone hassomething to contribute, and while I designed the course to take advantage of the wealth of knowledge, expertise, and experience we bring together, I cannot do it well without your participation. There are many opportunities built into this course for this type of work. It is important we do it together.
Mental Health/Wellness Statement
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If you’re struggling and need mental health services: Purdue University is committed to advancing the mental health and well-being of its students. If you or someone you know is feeling overwhelmed, depressed, and/or in need of mental health support, services are available. For help, such individuals should contact Counseling and Psychological Services (CAPS) at 765-494-6995 during and after hours, onweekends and holidays, or by going to the CAPS office on the second floor of the Purdue University Student Health Center (PUSH) during business hours.
If you need support and information about options and resources, please contact or see the Office of the Dean of Students. Call 765-494-1747. Hours of operation are M-F, 8 am- 5 pm.
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Basic Needs Security
Any student who faces challenges securing their food or housing and believes this may affect their performance in the course is urged to contact the Dean of Students for support. There is no appointment needed and Student Support Services is available to serve students 8 a.m.-5 p.m. Monday through Friday. Considering the significant disruptions caused by the current global crisis as it related toCOVID-19, students may submit requests for emergency assistance from the Critical Needs Fund.
Emergency Preparation
In the event of a major campus emergency, course requirements, deadlines and grading percentages are subject to changes that may be necessitated by a revised semester calendar or other circumstances beyond the instructor’s control. Relevant changes to this course will be posted onto the course website or can be obtained by contacting the instructors or TAs via email or phone. You are expected to read your @purdue.edu email on a frequent basis.
Course Evaluation
During the last two weeks of the semester, you will be provided with an opportunity to give feedback onthis course and your instructor. Purdue uses an online course evaluation system. You will receive an official email from evaluation administrators with a link to the online evaluation site. You will have up to13 days to complete this evaluation.
Only with constructive feedback from students can we improve the courses and this course specifically. Feedback from prior students has helped to evolve this course. Your participation is an integral part of this course and has real impact. I strongly urge you to participate in the evaluation system.
Solid State Devices 1
ECE 606 Week1
8/21 – 8/27
Week2 8/28 – 9/3
Week3 9/4 – 9/10
Week4 9/11 – 9/17
Week5 9/18 – 9/24
Project 1
Week 6 9/25 – 10/1
Solid State Devices 1: Course Schedule (FALL23)
Section 1 Introduction
L1.1 Solid State Devices: Introduction/Learning Outcomes L1.2 Basic Device Operations - Raising 1,000 Questions L1.3 Course Content and Requirements
Section 2 Materials
L2.1 Typical Semiconducting Materials
L2.2 Typical Applications of Elemental and Compound Semiconductors L2.3 Atomic Positions and Bond Orientations
Section 3 Crystals
L3.1 Crystal Definitions
L3.2 Tables of Bravais Lattice
L3.3 Density of Definitions and Applications to Common Material L3.4 Surfaces, Miller Index
Section 4 Elements of Quantum Mechanics
L4.1 Classic Systems
L4.2 Strange Experimental Results => The Advent of Quantum Mechanics L4.3 Why Do We Need Quantum Mechanics?
L4.4 Formulation of Schrödinger's Equation
Section 5 Analytical Solutions to Free and Bound Electrons
L5.1 Free and Tightly Bound Electrons L5.2 Electrons in a Finite Potential Well
Section 6 Electron Tunneling - Emergence of Bandstructure
L6.1 Transfer Matrix Method
L6.2 Tunneling Through a Single Barrier
L6.3 Tunneling Through a Double Barrier Structure
L6.4 Tunneling Through N Barriers - Formation of Bandstructure L6.5 Analytical and Numerical Solution Strategies
Section 7 Bandstructure - in 1D Periodic Potentials
L7.1 Bandstructure - Problem Formulation L7.2 Bandstructure - Solutions
L7.3 Band Properties
Section 8 Brillouin Zone and Reciprocal Lattice
L8.1 1D Problems L8.2 2D Problems L8.3 3D Problems
Section 9 Constant Energy Surfaces and Density of States
L9.1 Constant Energy Surfaces L9.2 Density of States
Section 10 Bandstructure in Real Materials (Si, Ge, GaAs)
L10.1 E(k) Diagrams in Specific Crystal Directions
L10.2 Constant Energy Surfaces - Effective Mass Tensor L10.3 Density of States Effective Mass
Section 11 Bandstructure Measurements
L11.1 Bandgap Measurements L11.2 Effective Mass Measurements
Section 12 Occupation of States
12.1 Rules of Filling Electronic States
12.2 Derivation of Fermi-Dirac Statistics: Three Techniques L12.3 Intrinsic Carrier Concentration
Section 13 Diagrams
L13.1 Band Diagrams
Sections 2 - 12: Project 1 - Quantum Dot Design
Section 14 Doping
L14.1 Basic Concepts of Donors and Acceptors
L14.2 Statistics of Donor and Acceptor Levels
L14.3 Temperature Dependence of Carrier Concentration L14.4 Multiple Doping, Co-Doping, And Heavy-Doping
Section 15 Introduction to Non-Equilibrium
L15.1 Steady State, Transient, Equilibrium L15.2 Recombination & Generation Overview
Video Readin g Length Assignments
0:29:06
0:16:10 0:07:16 0:05:40
0:18:09 ASF 1 - 4 0:05:08
0:07:57
0:05:04
0:59:11 ASF 4 - 19 0:11:40
0:12:12
0:21:19
0:14:00
0:59:21 ASF23-46 0:11:40
0:12:22
0:21:19
0:14:00
0:35:31 ASF23-46 0:20:51
0:14:40
1:03:26
0:15:08 0:13:15 0:12:37 0:12:22 0:10:04
0:42:59 ASF51-69 0:14:54
0:07:27
0:20:38
0:29:34 ASF70-83 0:08:04
0:10:48
0:10:42
0:22:38 ASF87-95 0:06:55
0:15:43
0:29:20
0:12:22 ASF70-83 0:09:09
0:07:49
0:18:51 ASF80-83 0:06:49
0:12:02
0:49:18 ASF 96 - 102 0:04:53
0:29:35
0:14:50
0:14:00 ASF 102 - 107 0:14:00
0:57:03 ASF 107 - 128 0:23:53
0:17:50
0:11:52
0:03:28
0:29:18
0:12:09 0:17:09
Assignments and Due Dates
Sections 2 - 3 Quizzes: Due Monday, 8/28, 1:00 PM ET (17:00 UTC)
Homework 1: Due Monday, 9/4, 1:00 PM ET (17:00 UTC) Sections 4 - 5 Quizzes: Due Monday, 9/4, 1:00 PM ET (17:00 UTC)
Homework 2: Due Monday, 9/11, 1:00 PM ET (17:00 UTC)
Sections 6 - 7 Quizzes: Due Monday, 9/11, 1:00 PM ET (17:00 UTC) Project 1 Team Formation: Due Monday, 9/11, 1:00 PM ET (17:00 UTC)
Homework 3: Due Monday, 9/18, 1:00 PM ET (17:00 UTC)
Sections 8 - 10 Quizzes: Due Monday, 9/18, 1:00 PM ET (17:00 UTC)
Homework 4: Due Monday, 9/25, 1:00 PM ET (17:00 UTC)
Sections 11 - 13 Quizzes Due: Monday, 9/25, 1:00 PM ET (17:00 UTC)
Project 1: Assigned Monday, 9/25, 12:00 AM ET (04:00 UTC) Project 1: Due Wednesday, 10/18, 1:00 PM ET (17:00 UTC) Peer Review: Due Tuesday, 10/31, 1:00 PM ET (17:00 UTC) No Homework Assignment
Sections 14 - 15 Quizzes: Due Monday, 10/2, 1:00 PM ET (17:00 UTC)
ECE 606 Week7
10/2 – 10/8
Project 1
Week 8
10/9 – 10/15
ECE 606 Week9
Week 10 10/23 – 10/29
Week 11 10/30 – 11/5
Solid State Devices 1: Course Schedule (SPRING23) Section 16 Recombination and Generation
L16.1 Motivation of R-G Formula
L16.2 Derivation of SRH Formula
* L16.2.1 Trap Assisted Recombination Rates
* L16.2.2 Capture and Emission Relationship (n1 and p1) * L16.2.3 Steady State Trap Population
* L16.2.4 Recombination- Generation Rate
L16.3 Applications of SRH Formula for Special Cases L16.4 Direct and Auger Recombination
L16.5 Nature of Interface States
L16.6 SRH Formula Adapted to Interface States L16.7 Surface Recombination in Depletion Region
Project 1 - Quantum Dot Design
Section 17 Intro to Transport - Drift, Mobility, Diffusion, Einstein Relationship
L17.1 Drift Current
L17.2 Mobility
L17.3 Carrier Concentration from Hall Effect L17.4 Physics of Diffusion – Einstein Relationship
Section 18 Semiconductor Equations
L18.1 Continuity Equations
L18.2 Analytical Solutions (Strategy & Examples) L18.3 Numerical Solutions
Solid State Devices 1: Course Schedule (FALL23)
Section 19 Introduction to PN Junctions
L19.1 Structure and Depletion Region
L19.2 Drawing Band-Diagrams in Equilibrium
Section 20 PN Diode I-V Characteristics
L20.1 Band Diagram with Applied Bias
L20.2 Derivation of the Forward Bias Formula
L20.3 Forward Bias - Non-Linear Regime L20.4 Non-Ideal Effects
Section 21 PN Diode AC Response
L21.1 Conductance and Series Resistance L21.2 Majority Carrier Junction Capacitance L21.3 Minority Carrier Diffusion Capacitance
Section 22 PN Diode Large Signal Response
L22.1 Charge Control Model
L22.2 Turn-Off and Turn-On Characteristics
L22.3 Steady-State Expression from Charge Continuity
Section 23 Schottky Diode
23.1 Basics
23.2 Physical Processes 23.3 Practical Issues
Section 28 MOS Electrostatics and MOScap
28.1 Background
28.2 Band Diagram in Equilibrium and with Bias -->MOS cap 28.3 Qualitative Q-V Characteristics of MOS Capacitor
28.4 MOScap Induced Charges in Depletion and Inversion 28.5 MOScap Exact Solution of the Electrostatic Problem
Section 29 MOS Capacitor Signal Response
29.1 Introduction / Background 29.2 Small Signal Response 29.3 Large Signal Response
Section 30 MOSFET Introduction
30.1 Sub-Threshold (Depletion) Current
30.2 Above-Threshold, Inversion Current
30.3 Velocity Saturation in Simplified Theory
30.4 Comments on Bulk Charge Theory & Small Transistors
Sections 30-32 - Project 2 - Nanowire Design - Independent Study
Video Readin g Length Assignments
2:33:24 ASF 134 - 167 0:17:31
0:18:09 0:22:02 0:11:31 0:10:36 0:12:23 0:09:38 0:08:59 0:31:23 0:11:12
1:01:29 ASF 175 - 200 0:07:07
0:21:24
0:16:10
0:16:48
0:57:58 ASF 202 - 209 0:11:41
0:17:54
0:28:23
Video Readin g Length Assignments
0:35:05 SDF 195 - 227 0:18:45
0:16:20
1:32:59 SDF 235 - 289 0:14:56
0:17:28
0:23:12
0:37:23
0:31:08 SDF 301 - 324 0:07:41
0:12:47
0:10:40
0:35:13 SDF 301 - 324 0:15:09
0:12:31
0:07:33
0:53:33 SDF 477 - 501 0:27:14
0:18:47
0:07:32
1:12:21 SDF 563 - 599 0:12:43
0:12:10
0:13:53
0:11:54 0:21:41
0:50:33 SDF 584 - 599 0:16:23
0:21:48
0:12:22
0:47:27 SDF 611 - 637 0:14:48
0:12:21
0:12:24
0:07:54
Assignments and Due Dates No Homework Assignment
Section 16 Quiz: Due Monday, 10/9, 1:00 PM ET (17:00 UTC)
Project 1: Due Wednesday, 10/18, 1:00 PM ET (17:00 UTC) Peer Review: Due Tuesday, 10/31, 1:00 PM ET (17:00 UTC) Homework 5: Due Monday, 10/16, 1:00 PM ET (17:00 UTC)
Sections 17 - 18 Quizzes: Due: Monday, 10/16, 1:00 PM ET (17:00 UTC)
Assignments and Due Dates
Peer Review: Due Tuesday, 10/24, 1:00 PM ET (17:00 UTC)
Homework 6: Due Monday, 10/23, 1:00 PM ET (17:00 UTC)
Sections 19 - 20 Quizzes: Due Monday, 10/23, 1:00 PM ET (17:00 UTC) Project 2 Team Formation: Due Monday, 10/30, 1:00 PM ET (17:00 UTC)
Homework 7: Due Monday, 10/30, 1:00 PM ET (17:00 UTC)
Sections 21 - 23 Quizzes: Due Monday, 10/30, 1:00 PM ET (17:00 UTC)
Homework 8: Due Monday, 11/6, 1:00 PM ET (17:00 UTC)
Sections 28 - 30 Quizzes: Due Monday, 11/6, 1:00 PM ET (17:00 UTC)
Solid State Devices 1
Project 2
Project 2: Assigned Wednesday, 11/1, 1:00 PM ET (17:00 UTC) Project 2-Initial Report: Due Sunday, 12/3, 1:00 PM ET (18:00 UTC) Project 2-Final Report: Due Sunday, 12/10, 1:00 PM ET (18:00 UTC) Project 2 Peer Review: Due Wednesday, 12/13, 1:00 PM (18:00 UTC)
Solid State Devices 1
ECE 606 Week 12
11/6 – 11/12
Project 2
Week 13 11/13 – 11/19
Thanksgiving Break
Week 15
11/27 – 12/3
Week 16 12/4 – 12/10
Finals Week 12/11 – 12/17
Solid State Devices 1: Course Schedule (SPRING23) Section 31 MOSFET Non-Idealities
31.1 Flat Band Voltage - What Is It and How to Measure It? 31.2 Threshold Voltage Shift Due to Trapped Charges
31.3 Physics of Interface Traps
Section 32 Modern MOSFET
32.1 Some of Moore's Law Challenges 32.2 Short Channel Effect
32.3 Control of Threshold Voltage 32.4 Mobility Enhancement
Sections 30-32 - Project 2 - Nanowire Design - Independent Study
Section 24 Bipolar Junction Transistor - Fundamentals
24.1 Introduction
24.2 Band Diagram in Equilibrium 24.3 Currents in BJTs
24.4 Ebers Moll Model
Section 25 Bipolar Junction Transistor - Design
25.1 Current Gain in BJTs
25.2 Base Doping Design
25.3 Collector Doping Design (Kirk Effect, Base Pushout) 25.4 Emitter Doping Design
25.5 Poly-Si Emitter
25.6 Short Base Transport
Section 26 Bipolar Junction Transistor - High Frequency Response
26 BJT High-Frequency Response
Section 27 Heterojunction Bipolar Transistor
27.1 Applications, Concept, Innovation, Nobel Prize 27.2 Heterojunction Equilibrium Solution
27.3 Types of Heterojunctions
27.4 Abrupt Junction HBTs
27.5 Graded Junction HBTs
27.6 Graded Base HBTs
27.7 Double Heterojunction HBTs 27.8 Modern Designs
Reminder - Project 2 - Nanowire Design - Independent Study Time Peer-Review of Project 2
Course Closes Certificates Available
Video Readin g Length Assignments
1:19:42 SDF 645 - 683 0:28:04
0:23:34
0:28:04
1:20:49 SDF 691-709 0:28:19
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0:41:40 SDF 369 - 385 0:09:24
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0:10:32
1:31:22 SDF 389 - 433 0:24:01
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0:09:48
0:07:27 0:17:30 0:08:06
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1:22:42 SDF 429 - 433 0:04:37
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0:12:03 0:13:11 0:08:03 0:09:59 0:08:59
Assignments and Due Dates
Homework 9: Due Monday, 11/13, 1:00 PM ET (18:00 UTC)
Sections 31 - 32 Quizzes: Due Monday, 11/13, 1:00 PM ET (18:00 UTC)
Project 2-Initial Report: Due Sunday, 12/3, 1:00 PM ET (18:00 UTC) Project 2-Final Report: Due Sunday, 12/10, 1:00 PM ET (18:00 UTC) Project 2 Peer Review: Due Wednesday, 12/13, 1:00 PM (18:00 UTC)
No Homework Assignment
Section 24 - 25 Quizzes: Due Monday, 11/20, 1:00 PM ET (18:00 UTC)
No Homework Assignment
26 - 27 Quizzes: Due Sunday, 12/3, 1:00 PM ET (18:00 UTC)
Project 2-Initial Report: Due Sunday, 12/3, 1:00 PM ET (18:00 UTC)
Project 2-Final Report: Due Sunday, 12/10, 1:00 PM ET (18:00 UTC) Project 2 Peer Review: Due Wednesday, 12/13, 1:00 PM (18:00 UTC)
Friday, 12/17, 11:59 PM ET (12/18, 04:59 UTC) Tuesday, 12/20/2023
